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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA743A DESCRIPTION *Good Linearity of hFE *High Collector-Emitter Breakdown VoltageV(BR)CEO= -80V (Min) *Complement to Type 2SC1212A APPLICATIONS *Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25 -1 A 0.75 W PC Total Power Dissipation @ TC=25 TJ Junction Temperature 8 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA743A TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V -1.0 V ICER Collector Cutoff Current VCE= -80V; RBE= 1k -20 A hFE-1 DC Current Gain IC= -50mA ; VCE= -4V 60 200 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 20 fT Current-Gain--Bandwidth Product IC= -30mA ; VCE= -4V 120 MHz hFE-1 Classifications B 60-120 C 100-200 isc Websitewww.iscsemi.cn 2 |
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